Robert A. Wolkow


Phone: 780 641 1725
Email: Email Me
Department: Physics - Area: Condensed Matter
Office: CCIS 3 - 207
Office Hours: By appointment
Address: University of Alberta
Edmonton, AB
Canada T6G 2R3


BSc(1982) Waterloo, Canada

PhD(1987) Toronto, Canada

Postdoc(1987) IBM Yorktown Heights NY, USA

Member Technical Staff(1988), AT&T Bell Laboratories, Murray Hill NJ, USA

Senior Research Officer(1994) National Research Council, Ottawa, Canada

Principal Research Officer(2000) National Research Council, Ottawa, Canada

Professor and iCORE Chair of nanoscale Information and Communication Technologies(2003), Department of Physics, University of Alberta, Canada

Principal Research Officer and Molecular Scale Devices Program Leader(2003), National Institute for Nanotechnology, Edmonton, Canada

Scientific Director(2009), Hitachi electron microscopy product development Centre), National Institute for Nanotechnology, Edmonton, Canada

Program Coordinator(2011), Hybrid Nano-Electronic Systems, National Institute for Nanotechnology, 2011

Chief Technical Officer(2011), Quantum Silicon Inc., Edmonton, Canada

Research Interests:

Atom scale fabrication, physical principles of ultra low power electronic computation, atom scale chemical physics, highly coherent electron source studies, single atom ion source development, quantum computing

[Personal Website]

Selected Publications:

Dangling-bond charge qubit on a silicon surface, Livadaru, Xue, Shaterzadeh-Yazdi, DiLabio, Mutus, Pitters, Sanders, Wolkow, New J. Phys. 12 083018-32 (2010)

Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature, Haider, Pitters, DiLabio, Livadaru, Mutus, Wolkow, Phys.Rev.Lett., 102, 46805-8 (2009)

Tungsten nanotip fabrication by spatially controlled field-assisted reaction with nitrogen, Rezeq, Pitters, Wolkow, J. Chem. Phys., 124, 204716 (2006)

Field regulation of single-molecule conductivity by a charged surface atom, Piva, DiLabio, Pitters, Zikovsky, Rezeq, Dogel, Hofer, Wolkow, Nature 435, 658-661 (2005)

Controlled Molecular Adsorption on Si: Laying a Foundation for Molecular Devices, R.A. Wolkow, Ann. Rev. Phys.Chem., 50, 413-41, 1999

Evidence of adsorbed atom pairing during homoepitaxial growth of silicon, Wolkow, Phys. Rev. Lett., 74, 4448-51 (1995)

Direct observation of an increase in buckled dimers on Si(001) at low temperature, Wolkow, Phys. Rev. Lett., 68, 2636 (1992)

Atom resolved surface chemistry using scanning tunneling microscopy, R.A. Wolkow, Ph. Avouris, Phys. Rev. Lett., 60, 1049 (1988)